View IRF7855PBF_4561867.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

www.irf.com 1 01/05/06 IRF7855PBF hexfet power mosfet applications primary side switch in bridge topology in universal input (36-75vin) isolated dc-dc converters primary side switch in push-pull topology for 18-36vin isolated dc-dc converters secondary side synchronous rectification switch for 15vout suitable for 48v non-isolated synchronous buck dc-dc applications benefits low gate to drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current notes through are on page 8 so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v a i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c maximum power dissipation w linear derating factor w/c dv/dt peak diode recover y dv/dt v/ns t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 20 c/w r ja junction-to-ambient ( p c b mount ) ??? 50 9.9 -55 to + 150 0.02 2.5 max. 12 8.7 97 60 20 v dss r ds(on) max i d 60v 9.4m @vgs = 10v 12a www.datasheet.in
IRF7855PBF 2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 60 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 72 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 7.4 9.4 m ? v gs(th) gate threshold voltage 3.0 ??? 4.9 v i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic @ t j = 25c (unless otherwise specified) parameter min. typ. max. units gfs forward transconductance 14 ??? ??? s q g total gate charge ??? 26 39 q gs gate-to-source charge ??? 6.8 ??? nc q gd gate-to-drain ("miller") charge ??? 9.6 ??? t d(on) turn-on delay time ??? 8.7 ??? t r rise time ??? 13 ??? t d(off) turn-off delay time ??? 16 ??? ns t f fall time ??? 12 ??? c iss input capacitance ??? 1560 ??? c oss output capacitance ??? 440 ??? c rss reverse transfer capacitance ??? 120 ??? pf c oss output capacitance ??? 1910 ??? c oss output capacitance ??? 320 ??? c oss eff. effective output capacitance ??? 520 ??? avalanche characteristics parameter units e as si ng l e p u l se a va l anc h e e nergy mj i ar a va l anc h e c urrent a diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 2.3 (body diode) a i sm pulsed source current ??? ??? 97 (bod y diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 33 50 ns q rr reverse recovery charge ??? 38 57 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) typ. ??? ??? conditions v ds = 25v, i d = 7.2a i d = 7.2a v ds = 30v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz 540 7.2 mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 7.2a, v gs = 0v t j = 25c, i f = 7.2a, v dd = 25v di/dt = 100a/s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 12a v ds = v gs , i d = 100a v ds = 60v, v gs = 0v v ds = 60v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v max. v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 48v, ? = 1.0mhz v gs = 0v, v ds = 0v to 48v v gs = 10v v dd = 30v i d = 7.2a r g = 6.2 ? www.datasheet.in
IRF7855PBF www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 60s pulse width tj = 25c 4.5v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 60s pulse width tj = 150c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 12a v gs = 10v www.datasheet.in
IRF7855PBF 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100sec 1msec 10msec 0 5 10 15 20 25 30 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v v ds = 12v i d = 7.2a www.datasheet.in
IRF7855PBF www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 9. maximum drain current vs. ambient temperature 25 50 75 100 125 150 t a , ambient temperature (c) 0 2 4 6 8 10 12 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) ri (c/w) i (sec) 6.734 0.027848 27.268 1.3813 16.003 53 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri a a www.datasheet.in
IRF7855PBF 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 1k vcc dut 0 l q g q gs q gd v g charge 4 5 6 7 8 9 10 11 12 13 14 15 16 v gs, gate -to -source voltage (v) 0 5 10 15 20 25 30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 7.2a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 400 800 1200 1600 2000 2400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.41a 0.58a bottom 7.2a 10 20 30 40 50 60 70 80 90 100 i d , drain current (a) 4 6 8 10 12 14 16 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 125c vgs = 10v www.datasheet.in
IRF7855PBF www.irf.com 7 so-8 package details so-8 part marking

! "## $% $

$ $ &

www.datasheet.in
IRF7855PBF 8 www.irf.com repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 21mh, r g = 25 ? , i as = 7.2a. when mounted on 1 inch square copper board, t 10 sec. 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel pulse width 400s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . i sd 7.2a, di/dt 650a/s, v dd v (br)dss , t j 150c. r is measured at
ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/06 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. www.datasheet.in

▲Up To Search▲

Price & Availability of IRF7855PBF

	To Download IRF7855PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .